IRF1010ZSPBF

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IRF1010ZSPBF

Manufacturer part number:IRF1010ZSPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 55V 75A D2PAK

Case Package:SOT-23

Datasheet:IRF1010ZSPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2003
Series	HEXFET®
JESD-609 Code	e3
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	7.5mOhm
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Subcategory	FET General Purpose Power
Voltage - Rated DC	55V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	75A
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	140W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	140W
Case Connection	DRAIN
Turn On Delay Time	18 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	7.5m Ω @ 75A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2840pF @ 25V
Current - Continuous Drain (Id) @ 25°C	75A Tc
Gate Charge (Qg) (Max) @ Vgs	95nC @ 10V
Rise Time	150ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	92 ns
Turn-Off Delay Time	36 ns
Continuous Drain Current (ID)	75A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	55V
Dual Supply Voltage	55V
Recovery Time	33 ns
Nominal Vgs	4 V
Height	4.83mm
Length	10.67mm
Width	9.65mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free