STFW4N150 Description
The STMicroelectronics STFW4N150 employs the well-consolidated high-voltage MESH OVERLAYTM technology, and STMicroelectronics has built an innovative family of extremely high-voltage Power MOSFETs with exceptional performance. The improved arrangement, combined with the company's patented edge termination structure, results in the lowest RDS(on) per area, as well as unrivalled gate charge and switching characteristics.
STFW4N150 Features
Intrinsic capacitances and Qg minimized
High-speed switching
Fully isolated TO-3PF plastic packages
100% avalanche tested
The creepage distance path is 5.4 mm (Typ.) for TO-3PF
STFW4N150 Applications
