BSP100,135

new-10%

Manufacturer part number:BSP100,135

Manufacturer:Nexperia USA Inc.

Description:MOSFET N-CH 30V 3.2A SOT223

Case Package:SOT-23

Datasheet:BSP100,135 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Surface Mount	YES
Number of Pins	4
Weight	4.535924g
Transistor Element Material	SILICON
Operating Temperature	-65°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	TrenchMOS™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	4
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	8.3W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	8.3W
Case Connection	DRAIN
Turn On Delay Time	6 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	100m Ω @ 2.2A, 10V
Vgs(th) (Max) @ Id	2.8V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	250pF @ 20V
Current - Continuous Drain (Id) @ 25°C	3.2A Ta
Gate Charge (Qg) (Max) @ Vgs	6nC @ 10V
Rise Time	8ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	21 ns
Continuous Drain Current (ID)	6A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	30V
Drain Current-Max (Abs) (ID)	3.5A
Drain to Source Breakdown Voltage	30V
Nominal Vgs	2 V
Turn Off Time-Max (toff)	75ns
Height	6.35mm
Length	6.35mm
Width	6.35mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free