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BSP52,115

BSP52,115

BSP52,115

Nexperia USA Inc.

BSP52,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

BSP52,115 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 1999
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BSP52
Pin Count 4
JESD-30 Code R-PDSO-G4
Qualification Status Not Qualified
Number of Elements 1
Polarity NPN
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Power Dissipation 1.25W
Case Connection COLLECTOR
Transistor Application SWITCHING
Transistor Type NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 500mA 10V
Current - Collector Cutoff (Max) 50nA
Vce Saturation (Max) @ Ib, Ic 1.3V @ 500μA, 500mA
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 1A
Transition Frequency 200MHz
Frequency - Transition 200MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.633352 $0.633352
10 $0.597502 $5.97502
100 $0.563681 $56.3681
500 $0.531775 $265.8875
1000 $0.501674 $501.674
BSP52,115 Product Details

BSP52,115 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 2000 @ 500mA 10V DC current gain.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.3V @ 500μA, 500mA.In this part, there is a transition frequency of 200MHz.Detection of Collector Emitter Breakdown at 80V maximal voltage is present.

BSP52,115 Features


the DC current gain for this device is 2000 @ 500mA 10V
the vce saturation(Max) is 1.3V @ 500μA, 500mA
a transition frequency of 200MHz

BSP52,115 Applications


There are a lot of Nexperia USA Inc. BSP52,115 applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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