2SC6098-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2SC6098-E Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
LIFETIME (Last Updated: 1 week ago)
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2012
JESD-609 Code
e6
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin/Bismuth (Sn/Bi)
Max Power Dissipation
800mW
Pin Count
3
Power - Max
800mW
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
2.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 100mA 5V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
165mV @ 50mA, 1A
Collector Emitter Breakdown Voltage
80V
Frequency - Transition
350MHz
Collector Base Voltage (VCBO)
120V
Emitter Base Voltage (VEBO)
6.5V
hFE Min
300
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.022395
$2.022395
10
$1.907920
$19.0792
100
$1.799925
$179.9925
500
$1.698042
$849.021
1000
$1.601926
$1601.926
2SC6098-E Product Details
2SC6098-E Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 300 @ 100mA 5V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 165mV @ 50mA, 1A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6.5V.Single BJT transistor is possible for the collector current to fall as low as 2.5A volts at Single BJT transistors maximum.
2SC6098-E Features
the DC current gain for this device is 300 @ 100mA 5V the vce saturation(Max) is 165mV @ 50mA, 1A the emitter base voltage is kept at 6.5V
2SC6098-E Applications
There are a lot of ON Semiconductor 2SC6098-E applications of single BJT transistors.