PMSTA3904,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from NXP USA Inc. stock available on our website
SOT-23
PMSTA3904,115 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Supplier Device Package
SOT-323-3
Operating Temperature
150°C TJ
Packaging
Cut Tape (CT)
Published
2009
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
PMSTA3904
Power - Max
200mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA 1V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
40V
Current - Collector (Ic) (Max)
200mA
Frequency - Transition
300MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.02000
$0.02
500
$0.0198
$9.9
1000
$0.0196
$19.6
1500
$0.0194
$29.1
2000
$0.0192
$38.4
2500
$0.019
$47.5
PMSTA3904,115 Product Details
PMSTA3904,115 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 10mA 1V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 5mA, 50mA.SOT-323-3 is the supplier device package for this product.The device exhibits a collector-emitter breakdown at 40V.
PMSTA3904,115 Features
the DC current gain for this device is 100 @ 10mA 1V the vce saturation(Max) is 300mV @ 5mA, 50mA the supplier device package of SOT-323-3
PMSTA3904,115 Applications
There are a lot of NXP USA Inc. PMSTA3904,115 applications of single BJT transistors.