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NJV4031NT3G

NJV4031NT3G

NJV4031NT3G

ON Semiconductor

NJV4031NT3G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NJV4031NT3G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 7 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface MountYES
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation2W
Terminal Position DUAL
Terminal FormGULL WING
Pin Count4
Reference Standard AEC-Q101
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 2W
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1A 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 300mA, 3A
Collector Emitter Breakdown Voltage40V
Transition Frequency 215MHz
Frequency - Transition 215MHz
Collector Base Voltage (VCBO) 40V
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:30522 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.284535$2.284535
10$2.155222$21.55222
100$2.033228$203.3228
500$1.918140$959.07
1000$1.809566$1809.566

NJV4031NT3G Product Details

NJV4031NT3G Overview


In this device, the DC current gain is 200 @ 1A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A VCE saturation (Max) of 300mV @ 300mA, 3A means Ic has reached its maximum value(saturated).In this part, there is a transition frequency of 215MHz.In extreme cases, the collector current can be as low as 3A volts.

NJV4031NT3G Features


the DC current gain for this device is 200 @ 1A 1V
the vce saturation(Max) is 300mV @ 300mA, 3A
a transition frequency of 215MHz

NJV4031NT3G Applications


There are a lot of ON Semiconductor NJV4031NT3G applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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