BC808-25LT1G Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 160 @ 100mA 1V.A collector emitter saturation voltage of -700mV allows maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.In this part, there is a transition frequency of 100MHz.As a result, it can handle voltages as low as 25V volts.A maximum collector current of 500mA volts can be achieved.

BC808-25LT1G Features

the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

BC808-25LT1G Applications

There are a lot of ON Semiconductor BC808-25LT1G applications of single BJT transistors.

• Driver
• Inverter
• Interface
• Muting