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BSS64,215

  • BSS64,215
  • BSS64,215

BSS64,215

BSS64,215

Nexperia USA Inc.

BSS64,215 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

BSS64,215 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.21.00.95
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BSS64
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Power - Max 250mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 10mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
JEDEC-95 Code TO-236AB
Vce Saturation (Max) @ Ib, Ic 200mV @ 15mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 100mA
Transition Frequency 100MHz
Frequency - Transition 100MHz
VCEsat-Max 0.2 V
Turn Off Time-Max (toff) 1000ns
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.06630 $0.1989
6,000 $0.05850 $0.351
15,000 $0.05070 $0.7605
30,000 $0.04810 $1.443
75,000 $0.04550 $3.4125
150,000 $0.04290 $6.435
BSS64,215 Product Details

BSS64,215 Overview


This device has a DC current gain of 20 @ 10mA 1V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 200mV @ 15mA, 50mA.Parts of this part have transition frequencies of 100MHz.The device exhibits a collector-emitter breakdown at 80V.

BSS64,215 Features


the DC current gain for this device is 20 @ 10mA 1V
the vce saturation(Max) is 200mV @ 15mA, 50mA
a transition frequency of 100MHz

BSS64,215 Applications


There are a lot of Nexperia USA Inc. BSS64,215 applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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