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BST62,115

  • BST62,115
  • BST62,115

BST62,115

BST62,115

Nexperia USA Inc.

BST62,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

BST62,115 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-243AA
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.75
Terminal Position SINGLE
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BST62
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Polarity PNP
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Power Dissipation 1.3W
Case Connection COLLECTOR
Transistor Application SWITCHING
Transistor Type PNP - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 500mA 10V
Current - Collector Cutoff (Max) 50nA
Vce Saturation (Max) @ Ib, Ic 1.3V @ 500μA, 500mA
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 1A
Transition Frequency 200MHz
Frequency - Transition 200MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $0.30155 $0.30155
2,000 $0.27710 $0.5542
5,000 $0.26895 $1.34475
BST62,115 Product Details

BST62,115 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 2000 @ 500mA 10V DC current gain.When VCE saturation is 1.3V @ 500μA, 500mA, transistor means Ic has reached transistors maximum value (saturated).A transition frequency of 200MHz is present in the part.Single BJT transistor shows a 80V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

BST62,115 Features


the DC current gain for this device is 2000 @ 500mA 10V
the vce saturation(Max) is 1.3V @ 500μA, 500mA
a transition frequency of 200MHz

BST62,115 Applications


There are a lot of Nexperia USA Inc. BST62,115 applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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