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PBSS5260QAZ

PBSS5260QAZ

PBSS5260QAZ

Nexperia USA Inc.

PBSS5260QAZ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBSS5260QAZ Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-XDFN Exposed Pad
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 325mW
Pin Count 3
Power - Max 325mW
Transistor Type PNP
Collector Emitter Voltage (VCEO) 400mV
Max Collector Current 1.7A
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 1.7A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 50mA, 1A
Collector Emitter Breakdown Voltage 60V
Max Breakdown Voltage 60V
Frequency - Transition 150MHz
Collector Base Voltage (VCBO) 60V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.137957 $0.137957
10 $0.130148 $1.30148
100 $0.122781 $12.2781
500 $0.115831 $57.9155
1000 $0.109275 $109.275
PBSS5260QAZ Product Details

PBSS5260QAZ Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 30 @ 1.7A 2V DC current gain.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 50mA, 1A.This device can take an input voltage of 60V volts before it breaks down.In extreme cases, the collector current can be as low as 1.7A volts.

PBSS5260QAZ Features


the DC current gain for this device is 30 @ 1.7A 2V
the vce saturation(Max) is 400mV @ 50mA, 1A

PBSS5260QAZ Applications


There are a lot of Nexperia USA Inc. PBSS5260QAZ applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

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