PBSS5260QAZ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PBSS5260QAZ Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
3-XDFN Exposed Pad
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2013
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
325mW
Pin Count
3
Power - Max
325mW
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
400mV
Max Collector Current
1.7A
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 1.7A 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 50mA, 1A
Collector Emitter Breakdown Voltage
60V
Max Breakdown Voltage
60V
Frequency - Transition
150MHz
Collector Base Voltage (VCBO)
60V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.137957
$0.137957
10
$0.130148
$1.30148
100
$0.122781
$12.2781
500
$0.115831
$57.9155
1000
$0.109275
$109.275
PBSS5260QAZ Product Details
PBSS5260QAZ Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 30 @ 1.7A 2V DC current gain.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 50mA, 1A.This device can take an input voltage of 60V volts before it breaks down.In extreme cases, the collector current can be as low as 1.7A volts.
PBSS5260QAZ Features
the DC current gain for this device is 30 @ 1.7A 2V the vce saturation(Max) is 400mV @ 50mA, 1A
PBSS5260QAZ Applications
There are a lot of Nexperia USA Inc. PBSS5260QAZ applications of single BJT transistors.