MJ15011G Overview

This device has a DC current gain of 20 @ 2A 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1V allows maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 400mA, 4A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (10A).During maximum operation, collector current can be as low as 10A volts.

MJ15011G Features

the DC current gain for this device is 20 @ 2A 2V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 10A

MJ15011G Applications

There are a lot of ON Semiconductor MJ15011G applications of single BJT transistors.

• Inverter
• Muting
• Interface
• Driver