FJX945GTF Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 1mA 6V.The collector emitter saturation voltage is 150mV, which allows for maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 5V allows for a high level of efficiency.The current rating of this fuse is 150mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.Single BJT transistor can be broken down at a voltage of 50V volts.Maximum collector currents can be below 150mA volts.

FJX945GTF Features

the DC current gain for this device is 200 @ 1mA 6V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 150mA
a transition frequency of 300MHz

FJX945GTF Applications

There are a lot of ON Semiconductor FJX945GTF applications of single BJT transistors.

• Inverter
• Driver
• Interface
• Muting