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MMBT3904LT1G

MMBT3904LT1G

MMBT3904LT1G

ON Semiconductor

MMBT3904LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MMBT3904LT1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Contact PlatingTin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface MountYES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Type General Purpose
Subcategory Other Transistors
Voltage - Rated DC 40V
Max Power Dissipation300mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating200mA
Frequency 300MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MMBT3904
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation225mW
Gain Bandwidth Product300MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 1V
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage40V
Transition Frequency 300MHz
Collector Emitter Saturation Voltage200mV
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 6V
hFE Min 100
Max Junction Temperature (Tj) 150°C
Turn Off Time-Max (toff) 250ns
Turn On Time-Max (ton) 70ns
Height 1.11mm
Length 2.9mm
Width 1.3mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:56961 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.14000$0.14
500$0.1386$69.3
1000$0.1372$137.2
1500$0.1358$203.7
2000$0.1344$268.8
2500$0.133$332.5

MMBT3904LT1G Product Details

MMBT3904LT1G Description


The NPN transistorMMBT3904LT1G is usually a bipolar transistor with a three-layer structure, which is used for signal amplification. It is a device controlled by current. The negative-positive-negative transistor is denoted by the abbreviation NPN.

MMBT3904LT1GFeatures


? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS

? Compliant

? S Prefix for Automotive and Other Applications Requiring Unique

? Site and Control Change Requirements; AEC?Q101 Qualified andPPAP Capable


MMBT3904LT1G Applications

?Automotive

?Applications Requiring UniqueSite and Control Change Requirements


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