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MMBT3904LT1G

MMBT3904LT1G

MMBT3904LT1G

ON Semiconductor

MMBT3904LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MMBT3904LT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Type General Purpose
Subcategory Other Transistors
Voltage - Rated DC 40V
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 200mA
Frequency 300MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MMBT3904
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 225mW
Gain Bandwidth Product 300MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 1V
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 40V
Transition Frequency 300MHz
Collector Emitter Saturation Voltage 200mV
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 6V
hFE Min 100
Max Junction Temperature (Tj) 150°C
Turn Off Time-Max (toff) 250ns
Turn On Time-Max (ton) 70ns
Height 1.11mm
Length 2.9mm
Width 1.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.14000 $0.14
500 $0.1386 $69.3
1000 $0.1372 $137.2
1500 $0.1358 $203.7
2000 $0.1344 $268.8
2500 $0.133 $332.5
MMBT3904LT1G Product Details

MMBT3904LT1G Description 


The NPN transistor MMBT3904LT1G is usually a bipolar transistor with a three-layer structure, which is used for signal amplification. It is a device controlled by current. The negative-positive-negative transistor is denoted by the abbreviation NPN.

 

MMBT3904LT1G  Features


? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS 

Compliant

? S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable

 


 MMBT3904LT1G  Applications

 

 ?Automotive

 ?Applications Requiring Unique Site and Control Change Requirements


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