NSVBCW32LT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 2mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 500μA, 10mA.A maximum collector current of 100mA volts can be achieved.
NSVBCW32LT1G Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 250mV @ 500μA, 10mA
NSVBCW32LT1G Applications
There are a lot of ON Semiconductor NSVBCW32LT1G applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
