NSVBCW32LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
NSVBCW32LT1G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2014
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
225mW
Terminal Position
DUAL
Terminal Form
GULL WING
Reference Standard
AEC-Q101
Number of Elements
1
Configuration
SINGLE
Power - Max
225mW
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
250mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
250mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage
32V
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
6,000
$0.06861
$0.41166
NSVBCW32LT1G Product Details
NSVBCW32LT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 2mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 500μA, 10mA.A maximum collector current of 100mA volts can be achieved.
NSVBCW32LT1G Features
the DC current gain for this device is 200 @ 2mA 5V the vce saturation(Max) is 250mV @ 500μA, 10mA
NSVBCW32LT1G Applications
There are a lot of ON Semiconductor NSVBCW32LT1G applications of single BJT transistors.