KSP55TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSP55TA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins
3
Weight
240mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Box (TB)
Published
2007
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-60V
Max Power Dissipation
625mW
Terminal Position
BOTTOM
Current Rating
-500mA
Frequency
50MHz
Base Part Number
KSP55
Number of Elements
1
Element Configuration
Single
Power Dissipation
625mW
Transistor Application
AMPLIFIER
Gain Bandwidth Product
50MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage
60V
Transition Frequency
50MHz
Collector Emitter Saturation Voltage
-250mV
Max Breakdown Voltage
60V
Collector Base Voltage (VCBO)
-60V
Emitter Base Voltage (VEBO)
-4V
hFE Min
50
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2,000
$0.05586
$0.11172
6,000
$0.04884
$0.29304
10,000
$0.04181
$0.4181
50,000
$0.03713
$1.8565
100,000
$0.03323
$3.323
KSP55TA Product Details
KSP55TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 100mA 1V.The collector emitter saturation voltage is -250mV, giving you a wide variety of design options.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 100mA.Emitter base voltages of -4V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -500mA.There is a transition frequency of 50MHz in the part.The breakdown input voltage is 60V volts.Maximum collector currents can be below 500mA volts.
KSP55TA Features
the DC current gain for this device is 50 @ 100mA 1V a collector emitter saturation voltage of -250mV the vce saturation(Max) is 250mV @ 10mA, 100mA the emitter base voltage is kept at -4V the current rating of this device is -500mA a transition frequency of 50MHz
KSP55TA Applications
There are a lot of ON Semiconductor KSP55TA applications of single BJT transistors.