2SC5876U3HZGT106Q Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 500mA 2V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Parts of this part have transition frequencies of 300MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

2SC5876U3HZGT106Q Features

the DC current gain for this device is 120 @ 500mA 2V
the vce saturation(Max) is 300mV @ 10mA, 100mA
a transition frequency of 300MHz

2SC5876U3HZGT106Q Applications

There are a lot of ROHM Semiconductor 2SC5876U3HZGT106Q applications of single BJT transistors.

• Muting
• Inverter
• Interface
• Driver