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2SC5876U3HZGT106Q

  • 2SC5876U3HZGT106Q
  • 2SC5876U3HZGT106Q

2SC5876U3HZGT106Q

2SC5876U3HZGT106Q

ROHM Semiconductor

2SC5876U3HZGT106Q datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SC5876U3HZGT106Q Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Position DUAL
Terminal Form GULL WING
JESD-30 Code R-PDSO-G3
Number of Elements 1
Configuration SINGLE
Power - Max 200mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA 2V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 500mA
Transition Frequency 300MHz
Frequency - Transition 300MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
2SC5876U3HZGT106Q Product Details

2SC5876U3HZGT106Q Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 500mA 2V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Parts of this part have transition frequencies of 300MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

2SC5876U3HZGT106Q Features


the DC current gain for this device is 120 @ 500mA 2V
the vce saturation(Max) is 300mV @ 10mA, 100mA
a transition frequency of 300MHz

2SC5876U3HZGT106Q Applications


There are a lot of ROHM Semiconductor 2SC5876U3HZGT106Q applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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