PBHV8115T,215 Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 50 @ 500mA 10V.A VCE saturation (Max) of 350mV @ 200mA, 1A means Ic has reached its maximum value(saturated).If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In the part, the transition frequency is 30MHz.Single BJT transistor can be broken down at a voltage of 150V volts.When collector current reaches its maximum, it can reach 1A volts.

PBHV8115T,215 Features

the DC current gain for this device is 50 @ 500mA 10V
the vce saturation(Max) is 350mV @ 200mA, 1A
the emitter base voltage is kept at 6V
a transition frequency of 30MHz

PBHV8115T,215 Applications

There are a lot of Nexperia USA Inc. PBHV8115T,215 applications of single BJT transistors.

• Driver
• Inverter
• Interface
• Muting