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PBHV8540X,115

PBHV8540X,115

PBHV8540X,115

Nexperia USA Inc.

PBHV8540X,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBHV8540X,115 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Max Power Dissipation 520mW
Terminal Position SINGLE
Terminal Form FLAT
Frequency 30MHz
Base Part Number PBHV8540
Pin Count 3
Number of Elements 1
Configuration SINGLE
Power Dissipation 1.5W
Case Connection COLLECTOR
Power - Max 520mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 400V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 50mA 10V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 60mA, 300mA
Collector Emitter Breakdown Voltage 400V
Transition Frequency 30MHz
Max Breakdown Voltage 400V
Collector Base Voltage (VCBO) 500V
Emitter Base Voltage (VEBO) 6V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $0.18564 $0.18564
2,000 $0.17136 $0.34272
5,000 $0.16184 $0.8092
10,000 $0.15708 $1.5708
PBHV8540X,115 Product Details

PBHV8540X,115 Overview


This device has a DC current gain of 100 @ 50mA 10V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 60mA, 300mA.Keeping the emitter base voltage at 6V can result in a high level of efficiency.As you can see, the part has a transition frequency of 30MHz.A breakdown input voltage of 400V volts can be used.A maximum collector current of 500mA volts can be achieved.

PBHV8540X,115 Features


the DC current gain for this device is 100 @ 50mA 10V
the vce saturation(Max) is 250mV @ 60mA, 300mA
the emitter base voltage is kept at 6V
a transition frequency of 30MHz

PBHV8540X,115 Applications


There are a lot of Nexperia USA Inc. PBHV8540X,115 applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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