Welcome to Hotenda.com Online Store!

logo
userjoin
Home

PBHV8540Z,115

PBHV8540Z,115

PBHV8540Z,115

Nexperia USA Inc.

PBHV8540Z,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBHV8540Z,115 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 1.4W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 30MHz
[email protected] Reflow Temperature-Max (s) 30
Base Part Number PBHV8540
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 1.4W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 30MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 400V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 300mA 10V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 60mA, 300mA
Collector Emitter Breakdown Voltage 400V
Transition Frequency 30MHz
Max Breakdown Voltage 400V
Collector Base Voltage (VCBO) 500V
Emitter Base Voltage (VEBO) 6V
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $0.21450 $0.2145
2,000 $0.19800 $0.396
5,000 $0.18700 $0.935
10,000 $0.18150 $1.815
PBHV8540Z,115 Product Details

PBHV8540Z,115 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10 @ 300mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 60mA, 300mA.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 30MHz in the part.Breakdown input voltage is 400V volts.Maximum collector currents can be below 500mA volts.

PBHV8540Z,115 Features


the DC current gain for this device is 10 @ 300mA 10V
the vce saturation(Max) is 250mV @ 60mA, 300mA
the emitter base voltage is kept at 6V
a transition frequency of 30MHz

PBHV8540Z,115 Applications


There are a lot of Nexperia USA Inc. PBHV8540Z,115 applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

Related Part Number

2SAR554PFRAT100
BC847AQAZ
BC847AQAZ
$0 $/piece
BC32825
BC32825
$0 $/piece
2SC5662T2LP
STBV45G-AP
2PB709ARW,115
MMBT3904WT1
MMBT3904WT1
$0 $/piece
2N5551BU
2N5551BU
$0 $/piece
NJD35N04G
NJD35N04G
$0 $/piece

Get Subscriber

Enter Your Email Address, Get the Latest News