PBHV8540Z,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PBHV8540Z,115 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
1.4W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
30MHz
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
PBHV8540
Pin Count
4
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.4W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
30MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
400V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 300mA 10V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
250mV @ 60mA, 300mA
Collector Emitter Breakdown Voltage
400V
Transition Frequency
30MHz
Max Breakdown Voltage
400V
Collector Base Voltage (VCBO)
500V
Emitter Base Voltage (VEBO)
6V
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1,000
$0.21450
$0.2145
2,000
$0.19800
$0.396
5,000
$0.18700
$0.935
10,000
$0.18150
$1.815
PBHV8540Z,115 Product Details
PBHV8540Z,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10 @ 300mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 60mA, 300mA.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 30MHz in the part.Breakdown input voltage is 400V volts.Maximum collector currents can be below 500mA volts.
PBHV8540Z,115 Features
the DC current gain for this device is 10 @ 300mA 10V the vce saturation(Max) is 250mV @ 60mA, 300mA the emitter base voltage is kept at 6V a transition frequency of 30MHz
PBHV8540Z,115 Applications
There are a lot of Nexperia USA Inc. PBHV8540Z,115 applications of single BJT transistors.