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BFN18H6327XTSA1

BFN18H6327XTSA1

BFN18H6327XTSA1

Infineon Technologies

BFN18H6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BFN18H6327XTSA1 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series Automotive, AEC-Q101
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Max Power Dissipation 1W
Terminal Form FLAT
Frequency 70MHz
Number of Elements 1
Element Configuration Single
Power Dissipation 1.5W
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 30mA 10V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage 300V
Transition Frequency 70MHz
Collector Emitter Saturation Voltage 500mV
Max Breakdown Voltage 300V
Collector Base Voltage (VCBO) 300V
Emitter Base Voltage (VEBO) 5V
hFE Min 30
Height 1.5mm
Length 4.5mm
Width 2.5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
6,000 $0.14296 $0.85776
BFN18H6327XTSA1 Product Details

BFN18H6327XTSA1 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30 @ 30mA 10V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 2mA, 20mA.The emitter base voltage can be kept at 5V for high efficiency.A transition frequency of 70MHz is present in the part.Single BJT transistor can take a breakdown input voltage of 300V volts.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.

BFN18H6327XTSA1 Features


the DC current gain for this device is 30 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
a transition frequency of 70MHz

BFN18H6327XTSA1 Applications


There are a lot of Infineon Technologies BFN18H6327XTSA1 applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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