PBSS2540MB,315 Overview

This device has a DC current gain of 200 @ 10mA 2V, which is the ratio between the base current and the collector current.With a collector emitter saturation voltage of 250mV, it offers maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 50mV @ 500μA, 10mA.Keeping the emitter base voltage at 6V can result in a high level of efficiency.The breakdown input voltage is 40V volts.Collector current can be as low as 500mA volts at its maximum.

PBSS2540MB,315 Features

the DC current gain for this device is 200 @ 10mA 2V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 50mV @ 500μA, 10mA
the emitter base voltage is kept at 6V

PBSS2540MB,315 Applications

There are a lot of Nexperia USA Inc. PBSS2540MB,315 applications of single BJT transistors.

• Interface
• Muting
• Driver
• Inverter