MSB92WT1 Overview

This device has a DC current gain of 120 @ 1mA 10V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of -500mV ensures maximum design flexibility.When VCE saturation is 500mV @ 2mA, 20mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.A maximum collector current of 500mA volts is possible.

MSB92WT1 Features

the DC current gain for this device is 120 @ 1mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 50MHz

MSB92WT1 Applications

There are a lot of ON Semiconductor MSB92WT1 applications of single BJT transistors.

• Inverter
• Interface
• Muting
• Driver