PBSS301NX,115 Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 250 @ 2A 2V DC current gain.When VCE saturation is 200mV @ 265mA, 5.3A, transistor means Ic has reached transistors maximum value (saturated).An emitter's base voltage can be kept at 5V to gain high efficiency.Breakdown input voltage is 12V volts.Supplier package SOT-89 contains the product.Collector Emitter Breakdown occurs at 12VV - Maximum voltage.During maximum operation, collector current can be as low as 5.3A volts.

PBSS301NX,115 Features

the DC current gain for this device is 250 @ 2A 2V
the vce saturation(Max) is 200mV @ 265mA, 5.3A
the emitter base voltage is kept at 5V
the supplier device package of SOT-89

PBSS301NX,115 Applications

There are a lot of Nexperia USA Inc. PBSS301NX,115 applications of single BJT transistors.

• Driver
• Muting
• Interface
• Inverter