KSC945YBU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 1mA 6V.The collector emitter saturation voltage is 150mV, which allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 10mA, 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.The current rating of this fuse is 150mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.When collector current reaches its maximum, it can reach 150mA volts.
KSC945YBU Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 150mA
a transition frequency of 300MHz
KSC945YBU Applications
There are a lot of ON Semiconductor KSC945YBU applications of single BJT transistors.
- Driver
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- Muting
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- Interface
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- Inverter
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