KSD882YS Overview
In this device, the DC current gain is 160 @ 1A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is 300mV, which allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 200mA, 2A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 3A.There is a transition frequency of 90MHz in the part.In extreme cases, the collector current can be as low as 3A volts.
KSD882YS Features
the DC current gain for this device is 160 @ 1A 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 90MHz
KSD882YS Applications
There are a lot of ON Semiconductor KSD882YS applications of single BJT transistors.
- Interface
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- Inverter
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- Muting
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- Driver
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