PZTA96ST1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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PZTA96ST1G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Surface Mount
YES
Number of Pins
4
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
1.5W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
PZTA96
Pin Count
4
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.5W
Case Connection
COLLECTOR
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
450V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 10mA 10V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage
450V
Collector Emitter Saturation Voltage
-600mV
Max Breakdown Voltage
450V
Collector Base Voltage (VCBO)
450V
Emitter Base Voltage (VEBO)
5V
hFE Min
50
Height
1.65mm
Length
6.7mm
Width
3.7mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.522160
$1.52216
10
$1.436000
$14.36
100
$1.354717
$135.4717
500
$1.278035
$639.0175
1000
$1.205693
$1205.693
PZTA96ST1G Product Details
PZTA96ST1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 10mA 10V.As it features a collector emitter saturation voltage of -600mV, it allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 2mA, 20mA.Emitter base voltages of 5V can achieve high levels of efficiency.An input voltage of 450V volts is the breakdown voltage.The maximum collector current is 500mA volts.
PZTA96ST1G Features
the DC current gain for this device is 50 @ 10mA 10V a collector emitter saturation voltage of -600mV the vce saturation(Max) is 600mV @ 2mA, 20mA the emitter base voltage is kept at 5V
PZTA96ST1G Applications
There are a lot of ON Semiconductor PZTA96ST1G applications of single BJT transistors.