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PZTA96ST1G

PZTA96ST1G

PZTA96ST1G

ON Semiconductor

PZTA96ST1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

PZTA96ST1G Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Number of Pins 4
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 1.5W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Base Part Number PZTA96
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 1.5W
Case Connection COLLECTOR
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 450V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA 10V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage 450V
Collector Emitter Saturation Voltage -600mV
Max Breakdown Voltage 450V
Collector Base Voltage (VCBO) 450V
Emitter Base Voltage (VEBO) 5V
hFE Min 50
Height 1.65mm
Length 6.7mm
Width 3.7mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.522160 $1.52216
10 $1.436000 $14.36
100 $1.354717 $135.4717
500 $1.278035 $639.0175
1000 $1.205693 $1205.693
PZTA96ST1G Product Details

PZTA96ST1G Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 10mA 10V.As it features a collector emitter saturation voltage of -600mV, it allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 2mA, 20mA.Emitter base voltages of 5V can achieve high levels of efficiency.An input voltage of 450V volts is the breakdown voltage.The maximum collector current is 500mA volts.

PZTA96ST1G Features


the DC current gain for this device is 50 @ 10mA 10V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 600mV @ 2mA, 20mA
the emitter base voltage is kept at 5V

PZTA96ST1G Applications


There are a lot of ON Semiconductor PZTA96ST1G applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

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