MMBT5401WT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MMBT5401WT1G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
400mW
Terminal Position
DUAL
Terminal Form
GULL WING
Pin Count
3
Number of Elements
1
Element Configuration
Single
Gain Bandwidth Product
300MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 10mA 5V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
150V
Current - Collector (Ic) (Max)
500mA
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
-200mV
Collector Base Voltage (VCBO)
-160V
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.06463
$0.19389
6,000
$0.05650
$0.339
15,000
$0.04838
$0.7257
30,000
$0.04567
$1.3701
75,000
$0.04296
$3.222
150,000
$0.03844
$5.766
MMBT5401WT1G Product Details
MMBT5401WT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 60 @ 10mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -200mV, which allows maximum flexibilSingle BJT transistory in design.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.As a result, the part has a transition frequency of 100MHz.Maximum collector currents can be below 500mA volts.
MMBT5401WT1G Features
the DC current gain for this device is 60 @ 10mA 5V a collector emitter saturation voltage of -200mV the vce saturation(Max) is 500mV @ 5mA, 50mA a transition frequency of 100MHz
MMBT5401WT1G Applications
There are a lot of ON Semiconductor MMBT5401WT1G applications of single BJT transistors.