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MMBT5401WT1G

MMBT5401WT1G

MMBT5401WT1G

ON Semiconductor

MMBT5401WT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MMBT5401WT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 400mW
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 3
Number of Elements 1
Element Configuration Single
Gain Bandwidth Product 300MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 150V
Current - Collector (Ic) (Max) 500mA
Transition Frequency 100MHz
Collector Emitter Saturation Voltage -200mV
Collector Base Voltage (VCBO) -160V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.06463 $0.19389
6,000 $0.05650 $0.339
15,000 $0.04838 $0.7257
30,000 $0.04567 $1.3701
75,000 $0.04296 $3.222
150,000 $0.03844 $5.766
MMBT5401WT1G Product Details

MMBT5401WT1G Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 60 @ 10mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -200mV, which allows maximum flexibilSingle BJT transistory in design.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.As a result, the part has a transition frequency of 100MHz.Maximum collector currents can be below 500mA volts.

MMBT5401WT1G Features


the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
a transition frequency of 100MHz

MMBT5401WT1G Applications


There are a lot of ON Semiconductor MMBT5401WT1G applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

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