MJE181STU Overview

In this device, the DC current gain is 50 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.7V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The emitter base voltage can be kept at 7V for high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.A transition frequency of 50MHz is present in the part.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.

MJE181STU Features

the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of 1.7V
the vce saturation(Max) is 1.7V @ 600mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 50MHz

MJE181STU Applications

There are a lot of ON Semiconductor MJE181STU applications of single BJT transistors.

• Inverter
• Driver
• Interface
• Muting