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MMBT489LT1G

MMBT489LT1G

MMBT489LT1G

ON Semiconductor

MMBT489LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MMBT489LT1G Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 30V
Max Power Dissipation 310mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 2A
Frequency 100MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MMBT489
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 710mW
Transistor Application SWITCHING
Halogen Free Halogen Free
Gain Bandwidth Product 100MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 500mA 5V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 200mV @ 100mA, 1A
Collector Emitter Breakdown Voltage 30V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage 200mV
Max Breakdown Voltage 30V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
hFE Min 300
Height 1.11mm
Length 3.04mm
Width 2.64mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.10257 $0.30771
6,000 $0.09713 $0.58278
15,000 $0.08897 $1.33455
30,000 $0.08353 $2.5059
75,000 $0.07718 $5.7885
MMBT489LT1G Product Details

MMBT489LT1G Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 300 @ 500mA 5V DC current gain.This system offers maximum design flexibility due to a collector emitter saturation voltage of 200mV.A VCE saturation (Max) of 200mV @ 100mA, 1A means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at 5V allows for a high level of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 2A.As you can see, the part has a transition frequency of 100MHz.This device can take an input voltage of 30V volts before it breaks down.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.

MMBT489LT1G Features


the DC current gain for this device is 300 @ 500mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 100MHz

MMBT489LT1G Applications


There are a lot of ON Semiconductor MMBT489LT1G applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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