MMBT489LT1G Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 300 @ 500mA 5V DC current gain.This system offers maximum design flexibility due to a collector emitter saturation voltage of 200mV.A VCE saturation (Max) of 200mV @ 100mA, 1A means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at 5V allows for a high level of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 2A.As you can see, the part has a transition frequency of 100MHz.This device can take an input voltage of 30V volts before it breaks down.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.

MMBT489LT1G Features

the DC current gain for this device is 300 @ 500mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 100MHz

MMBT489LT1G Applications

There are a lot of ON Semiconductor MMBT489LT1G applications of single BJT transistors.

• Inverter
• Driver
• Muting
• Interface