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2N4923G

2N4923G

2N4923G

ON Semiconductor

2N4923G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

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2N4923G Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Bulk
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 80V
Max Power Dissipation 30W
Peak Reflow Temperature (Cel) 260
Current Rating 1A
Frequency 3MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number 2N4923
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 30W
Transistor Application SWITCHING
Halogen Free Halogen Free
Gain Bandwidth Product 3MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 500mA 1V
Current - Collector Cutoff (Max) 500μA
Vce Saturation (Max) @ Ib, Ic 600mV @ 100mA, 1A
Collector Emitter Breakdown Voltage 80V
Transition Frequency 3MHz
Collector Emitter Saturation Voltage 600mV
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
hFE Min 40
Height 11.0998mm
Length 7.7978mm
Width 2.9972mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.68000 $0.68
10 $0.58400 $5.84
100 $0.43900 $43.9
500 $0.34776 $173.88
1,000 $0.27169 $0.27169
2N4923G Product Details

2N4923G Overview


In this device, the DC current gain is 30 @ 500mA 1V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 600mV, giving you a wide variety of design options.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The emitter base voltage can be kept at 5V for high efficiency.Its current rating is 1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In the part, the transition frequency is 3MHz.Maximum collector currents can be below 1A volts.

2N4923G Features


the DC current gain for this device is 30 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 3MHz

2N4923G Applications


There are a lot of ON Semiconductor 2N4923G applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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