2N4923G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2N4923G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Surface Mount
NO
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Bulk
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
80V
Max Power Dissipation
30W
Peak Reflow Temperature (Cel)
260
Current Rating
1A
Frequency
3MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
2N4923
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
30W
Transistor Application
SWITCHING
Halogen Free
Halogen Free
Gain Bandwidth Product
3MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 500mA 1V
Current - Collector Cutoff (Max)
500μA
Vce Saturation (Max) @ Ib, Ic
600mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
80V
Transition Frequency
3MHz
Collector Emitter Saturation Voltage
600mV
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
hFE Min
40
Height
11.0998mm
Length
7.7978mm
Width
2.9972mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.68000
$0.68
10
$0.58400
$5.84
100
$0.43900
$43.9
500
$0.34776
$173.88
1,000
$0.27169
$0.27169
2N4923G Product Details
2N4923G Overview
In this device, the DC current gain is 30 @ 500mA 1V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 600mV, giving you a wide variety of design options.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The emitter base voltage can be kept at 5V for high efficiency.Its current rating is 1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In the part, the transition frequency is 3MHz.Maximum collector currents can be below 1A volts.
2N4923G Features
the DC current gain for this device is 30 @ 500mA 1V a collector emitter saturation voltage of 600mV the vce saturation(Max) is 600mV @ 100mA, 1A the emitter base voltage is kept at 5V the current rating of this device is 1A a transition frequency of 3MHz
2N4923G Applications
There are a lot of ON Semiconductor 2N4923G applications of single BJT transistors.