BCV71,215 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
BCV71,215 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
250mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
100MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
BCV71
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
250mW
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
110 @ 2mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
210mV @ 2.5mA, 50mA
Collector Emitter Breakdown Voltage
60V
Transition Frequency
100MHz
Max Breakdown Voltage
60V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.070722
$0.070722
500
$0.052002
$26.001
1000
$0.043335
$43.335
2000
$0.039757
$79.514
5000
$0.037156
$185.78
10000
$0.034563
$345.63
15000
$0.033427
$501.405
50000
$0.032869
$1643.45
BCV71,215 Product Details
BCV71,215 Overview
In this device, the DC current gain is 110 @ 2mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 210mV @ 2.5mA, 50mA.Emitter base voltages of 5V can achieve high levels of efficiency.As you can see, the part has a transition frequency of 100MHz.The breakdown input voltage is 60V volts.The maximum collector current is 100mA volts.
BCV71,215 Features
the DC current gain for this device is 110 @ 2mA 5V the vce saturation(Max) is 210mV @ 2.5mA, 50mA the emitter base voltage is kept at 5V a transition frequency of 100MHz
BCV71,215 Applications
There are a lot of Nexperia USA Inc. BCV71,215 applications of single BJT transistors.