MJD112T4G Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 1000 @ 2A 3V DC current gain.With a collector emitter saturation voltage of 2V, it offers maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 2A is necessary for high efficiency.Keeping the emitter base voltage at 5V can result in a high level of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 2A.Single BJT transistor contains a transSingle BJT transistorion frequency of 25MHz.The breakdown input voltage is 100V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.

MJD112T4G Features

the DC current gain for this device is 1000 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 25MHz

MJD112T4G Applications

There are a lot of ON Semiconductor MJD112T4G applications of single BJT transistors.

• Driver
• Interface
• Muting
• Inverter