PBSS304PZ,135 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
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PBSS304PZ,135 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
73
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
2W
Terminal Position
DUAL
Terminal Form
GULL WING
Frequency
130MHz
Base Part Number
PBSS304P
Pin Count
4
JESD-30 Code
R-PDSO-G4
Number of Elements
1
Element Configuration
Single
Power Dissipation
2W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
130MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
4.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
150 @ 2A 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
375mV @ 225mA, 4.5A
Collector Emitter Breakdown Voltage
60V
Transition Frequency
130MHz
Max Breakdown Voltage
60V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
Turn Off Time-Max (toff)
320ns
Turn On Time-Max (ton)
80ns
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
PBSS304PZ,135 Product Details
PBSS304PZ,135 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 150 @ 2A 2V DC current gain.A VCE saturation (Max) of 375mV @ 225mA, 4.5A means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at 5V allows for a high level of efficiency.Parts of this part have transition frequencies of 130MHz.This device can take an input voltage of 60V volts before it breaks down.Single BJT transistor is possible for the collector current to fall as low as 4.5A volts at Single BJT transistors maximum.
PBSS304PZ,135 Features
the DC current gain for this device is 150 @ 2A 2V the vce saturation(Max) is 375mV @ 225mA, 4.5A the emitter base voltage is kept at 5V a transition frequency of 130MHz
PBSS304PZ,135 Applications
There are a lot of Nexperia USA Inc. PBSS304PZ,135 applications of single BJT transistors.