MMBTA14LT1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MMBTA14LT1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2007
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Subcategory
Other Transistors
Voltage - Rated DC
30V
Max Power Dissipation
225mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Current Rating
300mA
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
MMBTA14
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
225mW
Transistor Application
AMPLIFIER
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
300mA
DC Current Gain (hFE) (Min) @ Ic, Vce
10000 @ 10mA 5V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 100μA, 100mA
Collector Emitter Breakdown Voltage
30V
Transition Frequency
125MHz
Collector Emitter Saturation Voltage
1.5V
Frequency - Transition
125MHz
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
10V
Continuous Collector Current
300mA
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.059078
$0.059078
500
$0.043440
$21.72
1000
$0.036200
$36.2
2000
$0.033211
$66.422
5000
$0.031038
$155.19
10000
$0.028873
$288.73
15000
$0.027923
$418.845
50000
$0.027457
$1372.85
MMBTA14LT1 Product Details
MMBTA14LT1 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10000 @ 10mA 5V.As it features a collector emitter saturation voltage of 1.5V, it allows for maximum design flexibility.A VCE saturation (Max) of 1.5V @ 100μA, 100mA means Ic has reached its maximum value(saturated).In order to achieve high efficiency, the continuous collector voltage should be kept at 300mA.Keeping the emitter base voltage at 10V can result in a high level of efficiency.This device has a current rating of 300mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A transition frequency of 125MHz is present in the part.Maximum collector currents can be below 300mA volts.
MMBTA14LT1 Features
the DC current gain for this device is 10000 @ 10mA 5V a collector emitter saturation voltage of 1.5V the vce saturation(Max) is 1.5V @ 100μA, 100mA the emitter base voltage is kept at 10V the current rating of this device is 300mA a transition frequency of 125MHz
MMBTA14LT1 Applications
There are a lot of ON Semiconductor MMBTA14LT1 applications of single BJT transistors.