PBSS4350D,135 Overview

In this device, the DC current gain is 100 @ 2A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 290mV @ 200mA, 2A.The base voltage of the emitter can be kept at 6V to achieve high efficiency.As you can see, the part has a transition frequency of 100MHz.An input voltage of 50V volts is the breakdown voltage.Collector current can be as low as 3A volts at its maximum.

PBSS4350D,135 Features

the DC current gain for this device is 100 @ 2A 2V
the vce saturation(Max) is 290mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz

PBSS4350D,135 Applications

There are a lot of Nexperia USA Inc. PBSS4350D,135 applications of single BJT transistors.

• Interface
• Driver
• Inverter
• Muting