MMBT2484LT1G Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 250 @ 1mA 5V DC current gain.A collector emitter saturation voltage of 350mV allows maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 350mV @ 100μA, 1mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Its current rating is 100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Breakdown input voltage is 60V volts.The maximum collector current is 100mA volts.

MMBT2484LT1G Features

the DC current gain for this device is 250 @ 1mA 5V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 350mV @ 100μA, 1mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA

MMBT2484LT1G Applications

There are a lot of ON Semiconductor MMBT2484LT1G applications of single BJT transistors.

• Driver
• Muting
• Interface
• Inverter