MMBT2222AM3T5G Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 10V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.A transition frequency of 300MHz is present in the part.Single BJT transistor can be broken down at a voltage of 40V volts.During maximum operation, collector current can be as low as 600mA volts.

MMBT2222AM3T5G Features

the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz

MMBT2222AM3T5G Applications

There are a lot of ON Semiconductor MMBT2222AM3T5G applications of single BJT transistors.

• Driver
• Inverter
• Muting
• Interface