CMPT930 TR PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
CMPT930 TR PBFREE Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
22 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Operating Temperature
-65°C~150°C TJ
Packaging
Cut Tape (CT)
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Subcategory
Other Transistors
Configuration
Single
Power - Max
350mW
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10μA 5V
Current - Collector Cutoff (Max)
10nA
Vce Saturation (Max) @ Ib, Ic
1V @ 500μA, 10mA
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
30mA
Transition Frequency
30MHz
Frequency - Transition
30MHz
Power Dissipation-Max (Abs)
0.35W
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.400000
$0.4
10
$0.377358
$3.77358
100
$0.355999
$35.5999
500
$0.335848
$167.924
1000
$0.316837
$316.837
CMPT930 TR PBFREE Product Details
CMPT930 TR PBFREE Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 10μA 5V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 500μA, 10mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 30MHz.Collector Emitter Breakdown occurs at 45VV - Maximum voltage.
CMPT930 TR PBFREE Features
the DC current gain for this device is 100 @ 10μA 5V the vce saturation(Max) is 1V @ 500μA, 10mA a transition frequency of 30MHz
CMPT930 TR PBFREE Applications
There are a lot of Central Semiconductor Corp CMPT930 TR PBFREE applications of single BJT transistors.