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CMPT930 TR PBFREE

CMPT930 TR PBFREE

CMPT930 TR PBFREE

Central Semiconductor Corp

CMPT930 TR PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website

SOT-23

CMPT930 TR PBFREE Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 22 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Operating Temperature -65°C~150°C TJ
Packaging Cut Tape (CT)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Other Transistors
Configuration Single
Power - Max 350mW
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10μA 5V
Current - Collector Cutoff (Max) 10nA
Vce Saturation (Max) @ Ib, Ic 1V @ 500μA, 10mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 30mA
Transition Frequency 30MHz
Frequency - Transition 30MHz
Power Dissipation-Max (Abs) 0.35W
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.400000 $0.4
10 $0.377358 $3.77358
100 $0.355999 $35.5999
500 $0.335848 $167.924
1000 $0.316837 $316.837
CMPT930 TR PBFREE Product Details

CMPT930 TR PBFREE Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 10μA 5V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 500μA, 10mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 30MHz.Collector Emitter Breakdown occurs at 45VV - Maximum voltage.

CMPT930 TR PBFREE Features


the DC current gain for this device is 100 @ 10μA 5V
the vce saturation(Max) is 1V @ 500μA, 10mA
a transition frequency of 30MHz

CMPT930 TR PBFREE Applications


There are a lot of Central Semiconductor Corp CMPT930 TR PBFREE applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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