PBSS4021NZ,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PBSS4021NZ,115 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2010
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
Tin (Sn)
Max Power Dissipation
2.6W
Frequency
95MHz
Base Part Number
PBSS4021N
Pin Count
4
Number of Elements
1
Element Configuration
Single
Power Dissipation
2.6W
Gain Bandwidth Product
95MHz
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
20V
Max Collector Current
8A
DC Current Gain (hFE) (Min) @ Ic, Vce
250 @ 4A 2V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
170mV @ 400mA, 8A
Collector Emitter Breakdown Voltage
20V
Max Breakdown Voltage
20V
Collector Base Voltage (VCBO)
20V
Emitter Base Voltage (VEBO)
5V
hFE Min
300
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.353840
$3.35384
10
$3.164000
$31.64
100
$2.984906
$298.4906
500
$2.815949
$1407.9745
1000
$2.656555
$2656.555
PBSS4021NZ,115 Product Details
PBSS4021NZ,115 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 250 @ 4A 2V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 170mV @ 400mA, 8A.An emitter's base voltage can be kept at 5V to gain high efficiency.Input voltage breakdown is available at 20V volts.A maximum collector current of 8A volts is possible.
PBSS4021NZ,115 Features
the DC current gain for this device is 250 @ 4A 2V the vce saturation(Max) is 170mV @ 400mA, 8A the emitter base voltage is kept at 5V
PBSS4021NZ,115 Applications
There are a lot of Nexperia USA Inc. PBSS4021NZ,115 applications of single BJT transistors.