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PBSS5240V,115

  • PBSS5240V,115
  • PBSS5240V,115

PBSS5240V,115

PBSS5240V,115

Nexperia USA Inc.

PBSS5240V,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBSS5240V,115 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 1.2W
Terminal Position DUAL
Terminal Form FLAT
Frequency 150MHz
Base Part Number PBSS5240
Pin Count 6
Number of Elements 1
Element Configuration Single
Power Dissipation 1.2W
Power - Max 900mW
Transistor Application SWITCHING
Gain Bandwidth Product 150MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 1.8A
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 530mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 40V
Transition Frequency 150MHz
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 5V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $8.134960 $8.13496
10 $7.674491 $76.74491
100 $7.240085 $724.0085
500 $6.830269 $3415.1345
1000 $6.443650 $6443.65
PBSS5240V,115 Product Details

PBSS5240V,115 Overview


This device has a DC current gain of 300 @ 100mA 5V, which is the ratio between the collector current and the base current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 530mV @ 200mA, 2A.Emitter base voltages of 5V can achieve high levels of efficiency.As a result, the part has a transition frequency of 150MHz.Single BJT transistor can be broken down at a voltage of 40V volts.In extreme cases, the collector current can be as low as 1.8A volts.

PBSS5240V,115 Features


the DC current gain for this device is 300 @ 100mA 5V
the vce saturation(Max) is 530mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz

PBSS5240V,115 Applications


There are a lot of Nexperia USA Inc. PBSS5240V,115 applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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