PBSS5240V,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PBSS5240V,115 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Number of Pins
6
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
1.2W
Terminal Position
DUAL
Terminal Form
FLAT
Frequency
150MHz
Base Part Number
PBSS5240
Pin Count
6
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.2W
Power - Max
900mW
Transistor Application
SWITCHING
Gain Bandwidth Product
150MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
1.8A
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 100mA 5V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
530mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
40V
Transition Frequency
150MHz
Max Breakdown Voltage
40V
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
5V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$8.134960
$8.13496
10
$7.674491
$76.74491
100
$7.240085
$724.0085
500
$6.830269
$3415.1345
1000
$6.443650
$6443.65
PBSS5240V,115 Product Details
PBSS5240V,115 Overview
This device has a DC current gain of 300 @ 100mA 5V, which is the ratio between the collector current and the base current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 530mV @ 200mA, 2A.Emitter base voltages of 5V can achieve high levels of efficiency.As a result, the part has a transition frequency of 150MHz.Single BJT transistor can be broken down at a voltage of 40V volts.In extreme cases, the collector current can be as low as 1.8A volts.
PBSS5240V,115 Features
the DC current gain for this device is 300 @ 100mA 5V the vce saturation(Max) is 530mV @ 200mA, 2A the emitter base voltage is kept at 5V a transition frequency of 150MHz
PBSS5240V,115 Applications
There are a lot of Nexperia USA Inc. PBSS5240V,115 applications of single BJT transistors.