Welcome to Hotenda.com Online Store!

logo
userjoin
Home

2SB1215S-H

2SB1215S-H

2SB1215S-H

ON Semiconductor

2SB1215S-H datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2SB1215S-H Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount NO
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Bulk
Published 2012
JESD-609 Code e6
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin/Bismuth (Sn/Bi)
Subcategory Other Transistors
Max Power Dissipation 1W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number 2SB1215
Configuration Single
Power - Max 1W
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 500mA 5V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 150mA, 1.5A
Collector Emitter Breakdown Voltage 100V
Frequency - Transition 130MHz
Emitter Base Voltage (VEBO) -6V
hFE Min 70
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.743720 $1.74372
10 $1.645019 $16.45019
100 $1.551904 $155.1904
500 $1.464061 $732.0305
1000 $1.381190 $1381.19
2SB1215S-H Product Details

2SB1215S-H Overview


This device has a DC current gain of 140 @ 500mA 5V, which is the ratio between the collector current and the base current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 150mA, 1.5A.If the emitter base voltage is kept at -6V, a high level of efficiency can be achieved.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.

2SB1215S-H Features


the DC current gain for this device is 140 @ 500mA 5V
the vce saturation(Max) is 500mV @ 150mA, 1.5A
the emitter base voltage is kept at -6V

2SB1215S-H Applications


There are a lot of ON Semiconductor 2SB1215S-H applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News