PBSS5240XF Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 1mA 5V.A collector emitter saturation voltage of -630mV ensures maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 140mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.A breakdown input voltage of 40V volts can be used.The maximum collector current is 2A volts.

PBSS5240XF Features

the DC current gain for this device is 300 @ 1mA 5V
a collector emitter saturation voltage of -630mV
the vce saturation(Max) is 140mV @ 5mA, 100mA
the emitter base voltage is kept at 5V

PBSS5240XF Applications

There are a lot of Nexperia USA Inc. PBSS5240XF applications of single BJT transistors.

• Inverter
• Driver
• Interface
• Muting