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2SC6076(TE16L1,NV)

2SC6076(TE16L1,NV)

2SC6076(TE16L1,NV)

Toshiba Semiconductor and Storage

2SC6076(TE16L1,NV) datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available on our website

SOT-23

2SC6076(TE16L1,NV) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 10W
Power - Max 10W
Transistor Type NPN
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 500mA 2V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A
Collector Emitter Breakdown Voltage 80V
Max Breakdown Voltage 80V
Frequency - Transition 150MHz
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.299362 $0.299362
10 $0.282417 $2.82417
100 $0.266431 $26.6431
500 $0.251350 $125.675
1000 $0.237122 $237.122
2SC6076(TE16L1,NV) Product Details

2SC6076(TE16L1,NV) Overview


This device has a DC current gain of 180 @ 500mA 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).This device can take an input voltage of 80V volts before it breaks down.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.

2SC6076(TE16L1,NV) Features


the DC current gain for this device is 180 @ 500mA 2V
the vce saturation(Max) is 500mV @ 100mA, 1A

2SC6076(TE16L1,NV) Applications


There are a lot of Toshiba Semiconductor and Storage 2SC6076(TE16L1,NV) applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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