2SC6076(TE16L1,NV) datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available on our website
SOT-23
2SC6076(TE16L1,NV) Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2013
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
10W
Power - Max
10W
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
180 @ 500mA 2V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
80V
Max Breakdown Voltage
80V
Frequency - Transition
150MHz
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.299362
$0.299362
10
$0.282417
$2.82417
100
$0.266431
$26.6431
500
$0.251350
$125.675
1000
$0.237122
$237.122
2SC6076(TE16L1,NV) Product Details
2SC6076(TE16L1,NV) Overview
This device has a DC current gain of 180 @ 500mA 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).This device can take an input voltage of 80V volts before it breaks down.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
2SC6076(TE16L1,NV) Features
the DC current gain for this device is 180 @ 500mA 2V the vce saturation(Max) is 500mV @ 100mA, 1A
2SC6076(TE16L1,NV) Applications
There are a lot of Toshiba Semiconductor and Storage 2SC6076(TE16L1,NV) applications of single BJT transistors.