PBSS5360ZX datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PBSS5360ZX Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2014
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
650mW
Pin Count
4
Power - Max
650mW
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
550mV
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 1A 5V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
550mV @ 300mA, 3A
Collector Emitter Breakdown Voltage
60V
Max Breakdown Voltage
60V
Frequency - Transition
130MHz
Collector Base Voltage (VCBO)
80V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1,000
$0.14555
$0.14555
PBSS5360ZX Product Details
PBSS5360ZX Overview
In this device, the DC current gain is 120 @ 1A 5V, which is the ratio between the base current and the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 550mV @ 300mA, 3A.Breakdown input voltage is 60V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
PBSS5360ZX Features
the DC current gain for this device is 120 @ 1A 5V the vce saturation(Max) is 550mV @ 300mA, 3A
PBSS5360ZX Applications
There are a lot of Nexperia USA Inc. PBSS5360ZX applications of single BJT transistors.