PBSS9410PA,115 Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 170 @ 1A 2V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 450mV @ 135mA, 2.7A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -7V.In this part, there is a transition frequency of 115MHz.Single BJT transistor can be broken down at a voltage of 100V volts.The maximum collector current is 2.7A volts.

PBSS9410PA,115 Features

the DC current gain for this device is 170 @ 1A 2V
the vce saturation(Max) is 450mV @ 135mA, 2.7A
the emitter base voltage is kept at -7V
a transition frequency of 115MHz

PBSS9410PA,115 Applications

There are a lot of Nexperia USA Inc. PBSS9410PA,115 applications of single BJT transistors.

• Inverter
• Muting
• Interface
• Driver