PMDXB600UNELZ

new-10%

Manufacturer part number:PMDXB600UNELZ

Manufacturer:Nexperia USA Inc.

Description:PMDXB600UNEL - 20 V, dual N-channel Trench MOSFET

Case Package:SOT-23

Datasheet:PMDXB600UNELZ Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-XFDFN Exposed Pad
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Max Power Dissipation	380mW
Terminal Form	NO LEAD
Pin Count	6
Reference Standard	IEC-60134
JESD-30 Code	R-PDSO-N6
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Power - Max	380mW
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	620m Ω @ 600mA, 4.5V
Vgs(th) (Max) @ Id	950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	21.3pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	0.7nC @ 4.5V
Drain to Source Voltage (Vdss)	20V
Continuous Drain Current (ID)	600mA
Drain Current-Max (Abs) (ID)	0.6A
Drain-source On Resistance-Max	0.62Ohm
DS Breakdown Voltage-Min	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
RoHS Status	ROHS3 Compliant