PMST5089,115 Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 400 @ 100μA 5V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 1mA, 10mA.An emitter's base voltage can be kept at 4.5V to gain high efficiency.100MHz is present in the transition frequency.A breakdown input voltage of 25V volts can be used.The maximum collector current is 100mA volts.

PMST5089,115 Features

the DC current gain for this device is 400 @ 100μA 5V
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
a transition frequency of 100MHz

PMST5089,115 Applications

There are a lot of Nexperia USA Inc. PMST5089,115 applications of single BJT transistors.

• Interface
• Inverter
• Driver
• Muting