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PMSTA05,115

  • PMSTA05,115
  • PMSTA05,115

PMSTA05,115

PMSTA05,115

Nexperia USA Inc.

PMSTA05,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PMSTA05,115 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 100MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number PMSTA05
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 200mW
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 60V
Transition Frequency 100MHz
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 4V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.077880 $0.07788
500 $0.057265 $28.6325
1000 $0.047721 $47.721
2000 $0.043780 $87.56
5000 $0.040916 $204.58
10000 $0.038062 $380.62
15000 $0.036810 $552.15
50000 $0.036195 $1809.75
PMSTA05,115 Product Details

PMSTA05,115 Overview


This device has a DC current gain of 50 @ 100mA 1V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Emitter base voltages of 4V can achieve high levels of efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.The maximum collector current is 500mA volts.

PMSTA05,115 Features


the DC current gain for this device is 50 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
a transition frequency of 100MHz

PMSTA05,115 Applications


There are a lot of Nexperia USA Inc. PMSTA05,115 applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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