IPD80N06S3-09

new-10%

Manufacturer part number:IPD80N06S3-09

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 55V 80A TO252-3

Case Package:SOT-23

Datasheet:IPD80N06S3-09 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2004
Series	OptiMOS™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Additional Feature	ULTRA LOW RESISTANCE
HTS Code	8541.29.00.95
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Reach Compliance Code	unknown
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	107W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	107W
Case Connection	DRAIN
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	8.4m Ω @ 40A, 10V
Vgs(th) (Max) @ Id	4V @ 55μA
Input Capacitance (Ciss) (Max) @ Vds	6100pF @ 25V
Current - Continuous Drain (Id) @ 25°C	80A Tc
Gate Charge (Qg) (Max) @ Vgs	88nC @ 10V
Rise Time	42ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	37 ns
Turn-Off Delay Time	26 ns
Continuous Drain Current (ID)	80A
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0084Ohm
Drain to Source Breakdown Voltage	55V
Pulsed Drain Current-Max (IDM)	320A
Avalanche Energy Rating (Eas)	170 mJ
RoHS Status	RoHS Compliant